Tokyo, Japan

Shun-ichiro Ohmi

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.5

ph-index = 1


Company Filing History:


Years Active: 2025

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2 patents (USPTO):Explore Patents

Title: Shun-ichiro Ohmi: Innovator in Non-volatile Storage Technologies

Introduction

Shun-ichiro Ohmi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of non-volatile storage technologies, holding two patents that showcase his innovative approach to materials and device design.

Latest Patents

Ohmi's latest patents include a non-volatile ferroelectric storage element and devices comprising them. This invention provides a non-volatile storage element and device that employs a ferroelectric material characterized by low power consumption, excellent reliability, and impressive write/erase endurance. The design allows for integration with advanced CMOS logic. The non-volatile storage element consists of at least a first conductive layer, a second conductive layer, and a ferroelectric layer made of a metal oxide. A buffer layer with oxygen ion conductivity is situated between the ferroelectric layer and the conductive layers. Additionally, an interface layer with a higher dielectric constant than silicon oxide may be included. The ferroelectric layer is scalable to 10 nm or smaller and is fabricated at a low temperature of ≤400° C., ensuring high reliability through low-temperature thermal annealing.

Another notable patent involves a laminate, electron source, and electronic device containing laminate, along with a production and cleaning method for laminate. This invention focuses on lanthanide boride, a low work function material with low chemical reactivity. The laminate features a lanthanide boride film on a substrate, covered by a thin film of hexagonal boron nitride, which allows for easier cleaning at lower temperatures compared to prior art.

Career Highlights

Shun-ichiro Ohmi has worked at esteemed institutions such as the National Institute for Materials Science and the Tokyo Institute of Technology. His work has significantly advanced the understanding and application of ferroelectric materials in storage devices.

Collaborations

Ohmi has collaborated with notable colleagues, including Katsumi Nagaoka and Takashi Aizawa, contributing to the development of innovative technologies in his field.

Conclusion

Shun-ichiro Ohmi's contributions to non-volatile storage technologies highlight his role as a leading inventor in Japan. His patents reflect a commitment to advancing materials science and electronic device design.

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