Tokyo Institute of Technology

National Institute for Materials Science

Shun-ichiro Ohmi

Hiroshi Funakubo

Atsushi Hori

Takao Shimizu

Takanori Mimura

Kuniyuki Kakushima

Yoshiko Nakamura

Ichiro Fujiwara

Joel Molina Reyes

Katsumi Nagaoka

Takashi Aizawa

The invention provides a non-volatile storage element and non-volatile storage device employing a ferroelectric material with low power consumption, excellent high reliability, and especially write/erase endurance, which can be mixed with advanced CMOS logic. The non-volatile storage element has at least a first conductive layer, a second conductive layer, and a ferroelectric layer composed of a metal oxide between both conductive layers, with a buffer layer having oxygen ion conductivity situated between the ferroelectric layer and the first conductive layer and/or second conductive layer. An interface layer composed of a single-layer film or a multilayer film may be also provided between the first conductive layer and the ferroelectric layer, the interface layer as a whole having higher dielectric constant than silicon oxide, and when the buffer layer is present between the first conductive layer and the ferroelectric layer, the interface layer is situated between the first conductive layer and the buffer layer. The non-volatile storage device comprises at least a memory cell array comprising low-power-consumption ferroelectric memory elements formed in a two-dimensional or three-dimensional configuration, and a control circuit. The ferroelectric layer is scalable to 10 nm or smaller and is fabricated at a low temperature of ≤400° C., and is subjected to low temperature thermal annealing treatment at ≤400° C. after the buffer layer has been formed, to provide high reliability.

Non-volatile ferroelectric storage element and devices comprising them

The purpose of the present invention, relating to lanthanide boride, which is known as a low work function material, is to provide a novel low work function material with low chemical reactivity, in particular a low work function material of which the material surface, after being exposed to atmospheric gases, can be cleaned at a heating temperature lower than in the prior art. The present invention is a laminate containing a lanthanide boride film formed on a substrate, the surface of said film being covered by a thin film, wherein the thin film is a monatomic layer of a hexagonal boron nitride thin film.

Laminate, electron source and electronic device containing laminate, and production method and cleaning method for laminate

Growing community of inventors

Tokyo, Japan

Shun-ichiro Ohmi