Company Filing History:
Years Active: 2020-2022
Title: Shuke Yan: Innovator in Light Emitting Diode Technology
Introduction
Shuke Yan is a prominent inventor based in San Jose, CA, known for his contributions to the field of light emitting diodes (LEDs). With a total of 2 patents, Yan has made significant advancements in the technology that underpins modern lighting solutions.
Latest Patents
One of Yan's latest patents is for an epitaxial gallium nitride-based light emitting diode and the method of making it. This innovative LED design includes a n-doped region, a p-doped region, and a light emitting region situated between these two regions. The n-doped region consists of a first GaN layer, at least one n-doped second GaN layer positioned over the first GaN layer, an AlGaN dislocation blocking layer above the n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film. This design enhances the efficiency and performance of the light emitting diode.
Career Highlights
Throughout his career, Shuke Yan has worked with notable companies such as Glo AB and Nanosys, Inc. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technologies in the field of optoelectronics.
Collaborations
Yan has collaborated with talented individuals in his field, including Zhen Chen and Fariba Danesh. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.
Conclusion
Shuke Yan's work in the development of gallium nitride-based light emitting diodes showcases his expertise and commitment to advancing LED technology. His contributions continue to influence the industry and pave the way for future innovations.