The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Aug. 24, 2020
Applicant:
Glo Ab, Lund, SE;
Inventors:
Zhen Chen, Dublin, CA (US);
Fariba Danesh, Los Altos Hills, CA (US);
Fan Ren, Sunnyvale, CA (US);
Shuke Yan, San Jose, CA (US);
Assignee:
NANOSYS, INC., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/12 (2010.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/0075 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/325 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.