Nanosys, Inc.

Glo Ab

Shuke Yan

Fariba Danesh

Zhen Chen

Fan Ren

A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.

Growing community of inventors

San Jose, CA, United States of America

Shuke Yan