Amagasaki, Japan

Shuichi Age

This inventor holds 1 USPTO granted patent. Top assignee: Osaka Titanium Co., Ltd.. Active years: 1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuichi Age. Retrieved from https://idiyas.com/inventor/shuichi-age

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: The Innovations of Shuichi Age

Introduction

Shuichi Age is a notable inventor based in Amagasaki, Japan. He has made significant contributions to the field of materials science, particularly in the manufacturing of high-purity silicon. His innovative methods have the potential to impact various industries, including electronics and renewable energy.

Latest Patents

Shuichi Age holds 1 patent for his invention titled "Manufacturing high purity/low chlorine content silicon by feeding." This patent describes a method of manufacturing high-purity silicon crystals. The process involves depositing silicon on the surface of high-purity silicon particles while feeding a material gas consisting of high-purity chlorosilane and a diluting gas into a fluidized bed reactor at high temperatures. This method achieves a silicon deposition rate in excess of about 0.4 µm/min.

Career Highlights

Shuichi Age is currently associated with Osaka Titanium Co., Ltd. His work at this company has allowed him to explore and develop advanced techniques in silicon manufacturing. His expertise in this area has positioned him as a valuable asset in the field of materials science.

Collaborations

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Conclusion

Shuichi Age's contributions to the field of high-purity silicon manufacturing demonstrate his innovative spirit and commitment to advancing technology. His work continues to influence the industry and pave the way for future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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