The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1991
Filed:
Mar. 06, 1990
Applicant:
Inventor:
Shuichi Age, Amagasaki, JP;
Assignee:
Osaka Titanium Co., Ltd., Hyogo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
423350 ; 427213 ; 427215 ; 427255 ; 4272551 ; 4272552 ;
Abstract
A method of manufacturing high-purity silicon crystals, which comprises depositing silicon on the surface of high-purity silicon particles, while feeding into a fluidized bed reactor at a high temperature a material gas consisting of high purity chlorosilane and a diluting gas, said method having a silicon deposition rate in excess of about 0.4 .mu.m/min.