Jubei, Taiwan

Shui-Chin Su


Average Co-Inventor Count = 1.0

ph-index = 2

Forward Citations = 6(Granted Patents)


Location History:

  • Jubei, TW (2016)
  • Hsinchu County, TW (2016)

Company Filing History:


Years Active: 2016

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2 patents (USPTO):Explore Patents

Title: Innovations of Shui-Chin Su in Phase Change Memory Technology

Introduction

Shui-Chin Su is a notable inventor based in Jubei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of phase change memory devices. With a total of 2 patents, his work has advanced the efficiency and precision of memory fabrication processes.

Latest Patents

One of his latest patents is titled "Method for Fabricating Phase Change Memory Device." This innovative method utilizes well-established semiconductor processes to create a larger-size sacrifice layer initially. Subsequently, a wet etching technology is employed to form a narrowed sacrifice layer, which allows for precise definition and easy adjustment of smaller-size heaters, ensuring a stable fabrication process. Another significant patent is the "Manufacturing Method of Phase Change Memory." This method involves forming a first mask layer on a dielectric layer, followed by a second mask layer on top. The process includes patterning both mask layers to expose a side surface of the first mask layer, removing a portion to create a columnar protrusion, and forming an annular heater that surrounds this protrusion.

Career Highlights

Shui-Chin Su has worked with several prominent companies in the semiconductor industry. Notably, he has been associated with Ningbo Advanced Memory Technology Corporation and Being Advanced Memory Taiwan Limited. His experience in these organizations has contributed to his expertise in memory technology.

Collaborations

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Conclusion

Shui-Chin Su's innovative work in phase change memory technology showcases his significant contributions to the field. His patents reflect a commitment to advancing semiconductor processes, which will likely influence future developments in memory devices.

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