The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Sep. 09, 2015
Ningbo Advanced Memory Technology Corporation, Ningbo, CN;
Being Advanced Memory Taiwan Limited, Hsinchu County, TW;
Shui-Chin Su, Hsinchu County, TW;
Ningbo Advanced Memory Technology Corporation, Ningbo, CN;
Being Advanced Memory Taiwan Limited, Hsinchu County, TW;
Abstract
A manufacturing method of a phase change memory includes following steps. A first mask layer is formed on a dielectric layer, and a second mask layer is formed on the first mask layer. Then, the first mask layer and the second mask layer are patterned to expose a side surface of the first mask layer. A portion of the first mask layer is removed from the side surface of the first mask layer to form a columnar protrusion. After removing the second mask layer, a heating material layer is formed to conformally cover sidewalls and an upper surface of the columnar protrusion. The heating material layer on the upper surface of the columnar protrusion is removed, so as to form an annular heater from the heating material layer; and the annular heater surrounds the columnar protrusion.