The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Mar. 18, 2016
Applicants:
Ningbo Advanced Memory Technology Corp., NingBo, CN;
Being Advanced Memory Taiwan Limited, Jubei, Hsinchu County, TW;
Inventor:
Shui-Chin Su, Jubei, TW;
Assignees:
NINGBO ADVANCED MEMORY TECHNOLOGY CORP., Ningbo, CN;
BEING ADVANCED MEMORY TAIWAN LIMITED, Jubei, Hsinchu County, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/126 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1608 (2013.01); H01L 45/1666 (2013.01);
Abstract
A method for fabricating a phase change memory device uses the well-developed semiconductor process to fabricate a larger-size sacrifice beforehand, and next uses a wet etching technology to form a narrowed sacrifice layer having a smaller size, and then removes the narrowed sacrifice layer to form the desired mask pattern, whereby the method can precisely define and easily adjust a smaller-size heater and have a stable fabrication process.