Toyama, Japan

Shuhei Maeda

This inventor holds 1 USPTO granted patent. Top assignee: Kokusai Electric Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuhei Maeda. Retrieved from https://idiyas.com/inventor/shuhei-maeda-gz2fd3we

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Shuhei Maeda

Introduction

Shuhei Maeda is a notable inventor based in Toyama, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on temperature control methods that are essential for the manufacturing of semiconductor devices.

Latest Patents

Shuhei Maeda holds a patent for a temperature control method, which includes a method of manufacturing semiconductor devices, a non-transitory computer-readable recording medium, and a substrate processing apparatus. This innovative technique involves controlling a current heater supply power to ensure that a predicted temperature approaches a future target temperature. The future target temperature is updated based on current conditions, including a final target temperature and specific temperature convergence parameters.

Career Highlights

Maeda is currently employed at Kokusai Electric Corporation, where he applies his expertise in semiconductor manufacturing. His work has been instrumental in advancing the efficiency and effectiveness of temperature control in semiconductor processes.

Collaborations

Some of his coworkers include Hideto Yamaguchi and Seiya Shigematsu, who collaborate with him on various projects within the company.

Conclusion

Shuhei Maeda's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…