Hanno, Japan

Shugo Suzuki

This inventor holds 1 USPTO granted patent and 6 published patent applications. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation. Active years: 2026.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shugo Suzuki: Innovator in Semiconductor Technology

Introduction

Shugo Suzuki is a notable inventor based in Hanno, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Shugo Suzuki holds a patent for a semiconductor device that includes several key components. According to the patent, the device features first, second, and third lead frames, along with multiple transistors, including GaN transistors and MOS transistors. The arrangement of these components is designed to enhance the performance and efficiency of the semiconductor device. He has 1 patent to his name, showcasing his expertise in this specialized area.

Career Highlights

Throughout his career, Shugo Suzuki has worked with prominent companies in the technology sector. Notably, he has been associated with Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His experience in these organizations has allowed him to collaborate with leading experts in the field and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

One of his notable collaborators is Hitoshi Imi. Their partnership has likely fostered innovative ideas and solutions within the semiconductor industry.

Conclusion

Shugo Suzuki's contributions to semiconductor technology through his patent and career achievements highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future innovations in semiconductor devices.

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