Xiamen, China

ShuenTa Teng

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Bridgelux Optoelectronics (Xiamen) Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: ShuenTa Teng. Retrieved from https://idiyas.com/inventor/shuenta-teng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: ShuenTa Teng: LED Invention and Patent

Introduction

ShuenTa Teng is an inventor associated with Xiamen, China, and Bridgelux Optoelectronics (Xiamen) Co., Ltd. His patent work includes a light-emitting diode design intended to address current crowding and improve luminous efficiency.

Latest Patents

Teng is credited with 1 patent, titled “Light-emitting diode.” The invention describes a semiconductor structure with an N-type semiconductor layer, a light-emitting layer, a first P-type semiconductor layer, a hole diffusion layer, and a second P-type semiconductor layer stacked in sequence. The hole diffusion layer contains three sub-layers: an aluminum nitride (AlN) layer followed by two layers made of aluminum indium gallium nitride (AlInGaN) or aluminum gallium nitride (AlGaN). The design aims to alleviate current crowding and improve the diode’s luminous efficiency.

Career Highlights

Teng’s listed patent activity is connected with Bridgelux Optoelectronics (Xiamen) Co., Ltd. The patent focuses on the structure of an LED and the distribution of holes through its semiconductor layers.

Collaborations

Teng’s named coworkers include Hung-Chih Yang and Chunyu Liu.

Conclusion

ShuenTa Teng’s LED patent presents a layered semiconductor approach designed to reduce current crowding and enhance luminous efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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