The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Jul. 03, 2023
Applicant:

Kaistar Lighting (Xiamen) Co., Ltd, Xiamen, CN;

Inventors:

Shuenta Teng, Xiamen, CN;

Hung-Chih Yang, Xiamen, CN;

Chunyu Liu, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H10H 20/812 (2025.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8252 (2025.01); H10H 20/812 (2025.01); H10H 20/8162 (2025.01);
Abstract

A light-emitting diode includes an N-type semiconductor layer, a light-emitting layer, a first P-type semiconductor layer, a hole diffusion layer and a second P-type semiconductor layer sequentially stacked in that order. The hole diffusion layer includes a first sub-layer, a second sub-layer and a third sub-layer sequentially stacked along a direction from the first P-type semiconductor layer to the second P-type semiconductor layer. The first sub-layer is an AlN layer, the second sub-layer is an AlInGaN layer or an AlGaN layer, and the third sub-layer is an AlInGaN layer or an AlGaN layer. As a result, advantages of alleviating a current crowding problem and improving luminous efficiency can be achieved.


Find Patent Forward Citations

Quick Actions:

Teng, Shuenta. (2026). Light-emitting diode (U.S. Patent No. 12615887). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12615887

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…