Xiamen, China

Chunyu Liu

This inventor holds 1 USPTO granted patent. Top assignee: Bridgelux Optoelectronics (Xiamen) Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chunyu Liu. Retrieved from https://idiyas.com/inventor/chunyu-liu-vspm2s9k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chunyu Liu and a Light-Emitting Diode Innovation.

Introduction

Chunyu Liu is an inventor associated with Xiamen, China, and Bridgelux Optoelectronics (Xiamen) Co., Ltd. Her work includes a patent for a light-emitting diode designed to address current crowding and improve luminous efficiency.

Latest Patents

The provided information lists one patent for Chunyu Liu: 1 patent, titled “Light-emitting diode.” The invention describes a semiconductor structure with an N-type semiconductor layer, a light-emitting layer, a first P-type semiconductor layer, a hole diffusion layer, and a second P-type semiconductor layer stacked in sequence. The hole diffusion layer contains three sub-layers: an aluminum nitride (AlN) layer, followed by two layers made of aluminum indium gallium nitride (AlInGaN) or aluminum gallium nitride (AlGaN). The design aims to alleviate current crowding and improve the diode’s luminous efficiency.

Career Highlights

Liu’s listed patent reflects work on semiconductor device design and light-emitting diode performance. Her company affiliation connects her to Bridgelux Optoelectronics (Xiamen) Co., Ltd.

Collaborations

The provided information names ShuenTa Teng and Hung-Chih Yang as Liu’s coworkers. Their specific roles in the patent or related projects are not specified.

Conclusion

Chunyu Liu’s listed light-emitting diode patent focuses on a layered hole diffusion structure intended to reduce current crowding and enhance luminous efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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