Shu Y Wu

Title: Innovations of Shu Y Wu in Ferroelectric Devices

Introduction

Shu Y Wu is an accomplished inventor based in Artesia, CA (US). He has made significant contributions to the field of ferroelectric materials and devices. His innovative work has led to the development of a patented technology that enhances the performance of electronic devices.

Latest Patents

Shu Y Wu holds a patent for a ferroelectric thin film material, method of deposition, and devices. This patent describes a ferroelectric device that comprises a polarizing thin film of BaMF.sub.4 deposited on a substrate. The materials involved include barium (Ba) and various metals such as iron (Fe), manganese (Mn), cobalt (Co), nickel (Ni), magnesium (Mg), and zinc (Zn). The substrate can be silicon, sapphire, or gallium arsenide. Additionally, the patent outlines a non-volatile NDRO and DRO memory cell and methods for depositing the thin film, including a method for depositing bismuth titanate on a substrate.

Career Highlights

Shu Y Wu is currently employed at Westinghouse Electric Corporation, where he continues to innovate in the field of ferroelectric materials. His work has been instrumental in advancing the technology used in electronic devices, particularly in memory cells.

Collaborations

Shu Y Wu has collaborated with notable colleagues, including Donald R Lampe and Samar Sinharoy. These partnerships have contributed to the successful development and implementation of his patented technologies.

Conclusion

Shu Y Wu's contributions to the field of ferroelectric devices demonstrate his expertise and commitment to innovation. His patented work continues to influence the development of advanced electronic materials and devices.