The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1992
Filed:
Mar. 02, 1990
Applicant:
Inventors:
Donald R Lampe, Ellicott City, MD (US);
Samar Sinharoy, Monroeville, PA (US);
Shu Y Wu, Artesia, CA (US);
Harry Buhay, Allison Park, PA (US);
Maurice H Francombe, Penn Hills, PA (US);
S Visvanathan Krishnaswamy, Monroeville, PA (US);
Assignee:
Westinghouse Electric Corp., Pittsburgh, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01G / ;
U.S. Cl.
CPC ...
357 235 ; 357 51 ; 3613 / ; 365145 ;
Abstract
A ferroelectric device that comprises a polarizing thin film of BaMF.sub.4 deposited on a substrate. Ba is barium, M is one of the metals of the group consisting of iron (FE), manganese (Mn), cobolt (Co), nickel (Ni), magnesium (Mg), and zinc (Zn). The substrate is silicon, sapphire, or gallium arsenide. A non-volatile NDRO and DRO memory cell and methods for depositing the thin film. A method of depositing bismuth titanate on a substrate are described.