Shrinivas J Pandharpure

Title: Shrinivas J Pandharpure: Innovator in MOSFET Technology

Introduction

Shrinivas J Pandharpure is a notable inventor based in Bengaluru, India. He has made significant contributions to the field of semiconductor technology, particularly in the area of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices. With a total of 2 patents to his name, he has demonstrated a commitment to advancing technology through innovative solutions.

Latest Patents

His latest patents focus on methods of predicting unity gain frequency with direct current and/or low frequency parameters. These patents include various embodiments that provide approaches for predicting unity gain frequency in a MOSFET. The methods involve measuring in-line direct current parameters at different drain voltages, extracting transconductance and total gate capacitance, and ultimately predicting the unity gain frequency based on these extracted values.

Career Highlights

Shrinivas is currently employed at Globalfoundries Inc., a leading semiconductor manufacturer. His work at the company has allowed him to apply his innovative ideas in a practical setting, contributing to the development of advanced semiconductor technologies.

Collaborations

He has collaborated with notable coworkers such as Amit A Dikshit and Tamilmani Ethirajan, further enhancing the innovative environment in which he works.

Conclusion

Shrinivas J Pandharpure's contributions to MOSFET technology through his patents and work at Globalfoundries Inc. highlight his role as a key innovator in the semiconductor industry. His efforts continue to pave the way for advancements in electronic devices.