The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Jan. 02, 2014
Globalfoundries Inc., Grand Cayman, KY;
Amit A. Dikshit, Bangalore, IN;
Tamilmani Ethirajan, Bangalore, IN;
Shrinivas J. Pandharpure, Bangalore, IN;
Vaidyanathan T. Subramanian, Bangalore, IN;
Josef S. Watts, South Burlington, VT (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (f) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (V); extracting a transconductance (G) from the first set of in-line DC parameters as a function of a gate-voltage (V) and the first drain-voltage (V); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (V); extracting a total gate capacitance (C) from the second set of in-line DC parameters as a function of the gate-voltage (V); and predicting the unity gain frequency (f) of the MOSFET based upon the extracted transconductance (G) and the extracted total gate capacitance (C).