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For the Inventor, By the Inventor

Nirasaki, Japan

Shota Ishibashi

This inventor holds 11 USPTO granted patents and 6 published patent applications. Top assignee: Tokyo Electron Limited. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shota Ishibashi. Retrieved from https://idiyas.com/inventor/shota-ishibashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 

% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 1


Location History:

  • Nirasaki, JP (2022 - 2023)
  • Yamanashi, JP (2023 - 2024)

Company Filing History:

goldMedal11 out of 10,883 
 
Tokyo Electron Limited
 patents

Years Active: 2022-2026

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11 patents (USPTO):Explore Patents
1. 12729426 - Film forming method and film forming apparatus (2026-09-08),
2. 12488970 - Film forming apparatus and method of controlling film forming apparatus (2025-12-02),
3. 12486565 - Sputtering apparatus and control method (2025-12-02),
4. 12027353 - Substrate processing method and apparatus (2024-07-02),
5. 12014911 - Sputtering apparatus (2024-06-18),
6. 11851750 - Apparatus and method for performing sputtering process (2023-12-26),
7. 11776817 - Pattern forming method (2023-10-03),
8. 11742190 - Sputtering apparatus and film forming method (2023-08-29),
9. 11715671 - Film forming system, magnetization characteristic measuring device, and film forming method (2023-08-01),
10. 11705315 - Sputtering apparatus and sputtering method (2023-07-18),
11. 11479848 - Film forming apparatus and method (2022-10-25),

Title: Shota Ishibashi: Innovator in Substrate Processing Technologies

Introduction

Shota Ishibashi is a prominent inventor based in Nirasaki, Japan. He has made significant contributions to the field of substrate processing, holding a total of 11 patents. His innovative work has advanced the technology used in various applications, particularly in the semiconductor industry.

Latest Patents

Ishibashi's latest patents include a substrate processing method and apparatus. This method involves a substrate processing apparatus that features at least two targets and magnet-moving mechanisms. These mechanisms are designed to reciprocate a magnet on the back surface of each target, while a substrate moving mechanism moves the substrate in an orthogonal direction. The method allows for the magnets to reciprocate at different phases, enhancing processing efficiency.

Another notable patent is for a sputtering apparatus. This apparatus consists of a first and second target that emit sputter particles, along with a substrate support. A shielding plate is positioned between the targets and the substrate, featuring a through-hole for the sputter particles. The obstructing mechanism within the apparatus ensures that sputter particles from one target do not interfere with those from the other, optimizing the sputtering process.

Career Highlights

Shota Ishibashi is currently employed at Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His work at the company has been instrumental in developing advanced technologies that improve substrate processing methods.

Collaborations

Ishibashi has collaborated with notable colleagues, including Hiroyuki Toshima and Tatsuo Hirasawa. Their combined expertise has contributed to the successful development of innovative technologies in the field.

Conclusion

Shota Ishibashi's contributions to substrate processing technologies have made a significant impact in the semiconductor industry. His innovative patents and collaborations with esteemed colleagues highlight his role as a leading inventor in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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