The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Aug. 06, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Shota Ishibashi, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/02266 (2013.01); H01L 21/30608 (2013.01); H01L 21/3212 (2013.01);
Abstract

There is provided a pattern forming method for forming a pattern on a substrate. The method comprises preparing on a base a substrate in which a plurality of core materials arranged in a convex shape and in a line shape, and first and second line materials arranged in a convex shape and in a line shape on one side and the other side of each of the core materials, respectively, are formed, selectively forming a mask material on any one of the first and the second line materials by a process including anisotropic film formation, by a process including etching using a line mask having a line-shaped hole at a portion corresponding to a region where line cutting is performed, etching and removing the one on which the mask material is not formed among the first and the second line materials in the region, and removing the core material.


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