Shizue Hori

Title: Shizue Hori: Innovator in Semiconductor Technology

Introduction

Shizue Hori is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. Her work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of her latest patents is titled "Power device having high breakdown voltage and method of manufacturing." This invention aims to prevent leakage current in planar type semiconductor devices when they are reverse-biased. The design includes a semiconductive film formed on an n-type silicon substrate, strategically placed between a second p-type base layer and a channel stop layer. The semiconductive film's dangling bond density is set at 1.25 × 10¹⁸ cm^-3, which helps in reducing the time required to populate trapping levels with carriers. Another notable patent is "Semiconductor device and method of manufacturing the same with stable." This patent describes a semiconductor device that consists of multiple defect layers, ensuring that they do not contact each other while overlapping regions that affect carrier lifetime.

Career Highlights

Shizue Hori is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. Her innovative work has positioned her as a key figure in the development of advanced semiconductor solutions.

Collaborations

She has collaborated with notable colleagues, including Yoshiro Baba and Akihiko Osawa, contributing to various projects that enhance semiconductor technology.

Conclusion

Shizue Hori's contributions to semiconductor technology through her patents and collaborations highlight her role as an influential inventor in the field. Her work continues to pave the way for advancements in electronic devices.