The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1999
Filed:
May. 09, 1997
Hidenori Saihara, Kawasaki, JP;
Hiroshi Naruse, Yokohama, JP;
Hiroyuki Sugaya, Tokyo, JP;
Shizue Hori, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a method of manufacturing a semiconductor device, to form an opening in an insulation film such as a silicon oxide on a semiconductor substrate in a reverse tapered sectional configuration such that no gap is formed between a side surface of an epitaxial growth layer formed in the opening and the opening in the insulation film, the insulation film having the opening is subjected to a thermal process in an atmosphere of non-oxidizing gas including hydrogen elements such as hydrogen, silane or disilane gas. An opening is formed in the insulation film on the semiconductor substrate using isotropic etching. As a result of the above-described thermal process, decomposition of a silicon oxide proceeds from the interface between the insulation film and the semiconductor substrate at a side-wall of the opening to eventually form the opening in a reverse tapered sectional configuration at least in an edge portion thereof.