Shiu-Ko Jang Jiang

Title: Shiu-Ko Jang Jiang: Innovator in Semiconductor Technology

Introduction

Shiu-Ko Jang Jiang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of metal oxide semiconductor field effect transistors (MOSFETs). With a total of 2 patents to his name, Jiang's work is recognized for its innovative approaches to enhancing semiconductor performance.

Latest Patents

One of Jiang's latest patents focuses on the interface for metal gate integration in MOSFETs. This invention includes a semiconductor substrate and an interlayer dielectric (ILD) positioned over the substrate. A gate structure is formed within the ILD and is situated on the semiconductor substrate. The gate structure comprises a high-k dielectric material layer and a metal gate stack. Additionally, one or more portions of a protection layer are formed over the gate stack, with a contact etch stop layer established over the ILD and the protection layer. Notably, the metal gate stack incorporates aluminum, while the protection layer consists of aluminum oxide.

Career Highlights

Shiu-Ko Jang Jiang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to further his research and development efforts in semiconductor technologies.

Collaborations

Jiang has collaborated with notable colleagues in his field, including Jinn-Kwei Liang and Chung-Ren Sun. These collaborations have contributed to the advancement of semiconductor innovations and have fostered a productive research environment.

Conclusion

Shiu-Ko Jang Jiang is a key figure in the semiconductor industry, with a focus on enhancing MOSFET technology through his innovative patents. His contributions continue to shape the future of semiconductor applications.