The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Mar. 12, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jinn-Kwei Liang, Yongkang, TW;
Chung-Ren Sun, Kaohsiung, TW;
Shiu-Ko Jang Jiang, Tainan, TW;
Hsiang-Hsiang Ko, Sinying, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A metal oxide semiconductor field effect transistor (MOSFET) includes a semiconductor substrate and a interlayer dielectric (ILD) over the semiconductor substrate. A gate structure is formed within the ILD and disposed on the semiconductor substrate, wherein the gate structure includes a high-k dielectric material layer and a metal gate stack. One or more portions of a protection layer are formed over the gate stack, and a contact etch stop layer is formed over the ILD and over the one or more portions of the protection layer. The metal gate stack includes aluminum and the protection layer includes aluminum oxide.