Hefei, China

Shiran Zhang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2023-2025

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Shiran Zhang - Innovator in Semiconductor Technology

Introduction

Shiran Zhang is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to manufacturing methods and structures.

Latest Patents

Shiran Zhang's latest patents include a semiconductor structure and a manufacturing method thereof. The first patent outlines a manufacturing method that involves providing a substrate and forming a sacrificial dielectric layer on it. This method includes patterning the sacrificial dielectric layer to create first trenches and second trenches, followed by the formation of protective layers and bit line structures. The second patent also focuses on a semiconductor structure, detailing a base with an array region and a peripheral region, which includes isolation structures made of low dielectric constant materials.

Career Highlights

Shiran Zhang is currently employed at Changxin Memory Technologies, Inc., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the company's capabilities in memory technologies.

Collaborations

Shiran collaborates with talented individuals such as Yang Chen and Xinru Han, contributing to a dynamic team environment that fosters innovation and creativity.

Conclusion

Shiran Zhang's contributions to semiconductor technology through his patents and work at Changxin Memory Technologies, Inc. highlight his role as a key innovator in the field. His ongoing efforts continue to shape the future of semiconductor manufacturing.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…