Xuzhou, China

Shiran Cheng

This inventor holds 1 USPTO granted patent. Top assignee: Jiangsu Leuven Instruments Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shiran Cheng. Retrieved from https://idiyas.com/inventor/shiran-cheng-js6ugnne

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shiran Cheng and an Innovation in Ion Beam Etching

Introduction

Shiran Cheng is an inventor associated with Xuzhou, China, and Jiangsu Leuven Instruments Co., Ltd. Her work includes a patent for an ion beam etching machine and its lower electrode structure. The patent addresses how to control the movement of a component during etching to help prevent damage and improve product yield.

Latest Patents

Cheng is credited with 1 patent: “Ion Beam Etching Machine and Lower Electrode Structure Thereof.” The invention describes a lower electrode structure comprising an electrode plate, a ring pressing mechanism that supports the member to be etched, and a lifting mechanism that moves the ring pressing mechanism relative to the electrode plate.

The structure also includes a position measurement mechanism that measures the ring pressing mechanism’s position as it descends. Based on the measurement information, the lifting mechanism can stop the descent. This arrangement is designed to reduce the risk of fragmenting the member being etched and to improve product yield.

Career Highlights

Cheng’s listed patent reflects work on equipment and structural mechanisms for ion beam etching. Its position-measurement and controlled-lifting features focus on managing the movement of the supported component during processing.

Collaborations

Cheng is associated with Jiangsu Leuven Instruments Co., Ltd. Her listed coworkers include Huaidong Zhang and Yaoyao Zhang.

Conclusion

Shiran Cheng’s patent presents a measured, controlled approach to the lower electrode structure of an ion beam etching machine, with the aim of preventing component fragmentation and improving product yield.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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