Hsinchu, Taiwan

Shiou-Hann Liaw

This inventor holds 5 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1999-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shiou-Hann Liaw. Retrieved from https://idiyas.com/inventor/shiou-hann-liaw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 28(Granted Patents)


Location History:

  • Hsin-Chu, TW (1999 - 2000)
  • Hsiu-Chu, TW (2001 - 2003)

Company Filing History:


Years Active: 1999-2003

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5 patents (USPTO):Explore Patents

Title: Innovations of Shiou-Hann Liaw in EEPROM Technology

Introduction

Shiou-Hann Liaw is a prominent inventor based in Hsiu-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of EEPROM devices. With a total of five patents to his name, Liaw's work has advanced the capabilities of nonvolatile memory technologies.

Latest Patents

Liaw's latest patents include innovations in P-channel EEPROM and flash EEPROM devices. His work on flash EEPROM involves creating a device on a doped silicon semiconductor N-well formed in a doped semiconductor substrate. A channel with a specific width is established in the N-well, which is then covered with a tunnel oxide layer and an N+ doped polysilicon floating gate electrode layer. This layer can be patterned into a split gate floating gate electrode that has a narrower width than the channel width. The design also includes an interelectrode dielectric layer and a control gate electrode composed of P+ doped polysilicon. These components are patterned into a gate electrode stack above the channel, facilitating the formation of source and drain regions in the substrate.

Another notable patent involves nonvolatile devices with a P-channel EEPROM device as an injector. This FET semiconductor device features an N-region and a P-region formed in the substrate, with a first channel in the N-region and a second channel in the P-region. The design includes N+ and P+ drain regions, as well as source regions, all self-aligned with the gate electrode stack. This innovative approach enhances the functionality and efficiency of EEPROM devices.

Career Highlights

Shiou-Hann Liaw is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to push the boundaries of semiconductor technology. His expertise in EEPROM devices has positioned him as a key figure in the industry, contributing to advancements that benefit various applications in electronics.

Collaborations

Liaw has collaborated with notable coworkers, including Yai-Fen Lin and Di-Son Kuo. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of semiconductor research.

Conclusion

Shiou-Hann Liaw's contributions to EEPROM technology exemplify the impact of innovative thinking in the semiconductor industry. His patents reflect a commitment to advancing memory technologies, and his work continues to influence the future of

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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