Shiomi Inoue

Title: Shiomi Inoue: Semiconductor Device Innovation

Introduction

Shiomi Inoue is an inventor associated with Fuji Electric Co., Ltd. Her listed patent work concerns semiconductor device design and manufacturing. The provided information identifies her location as Sapporo-City, Japan.

Latest Patents

Inoue is credited with one patent: “Semiconductor Device and Method of Manufacturing the Same.” The invention describes a semiconductor device with an insulated gate electrode structure, base region, and main electrode regions. It also features a contact plug buried in a trench that extends through a main electrode region to the base region, with a barrier metal film interposed.

The patent further describes an interlayer insulating film with a contact hole connected to the trench, as well as a contact region at the trench bottom. Its specified geometry includes an opening width at the lower end of the contact hole that conforms to the trench opening, and curved side-wall surfaces that bulge outward.

Career Highlights

Inoue’s listed patent reflects work on semiconductor structures and manufacturing methods. The record associates her with Fuji Electric Co., Ltd., a company active in electrical and semiconductor technologies.

Collaborations

The provided information names Keisuke Kobayashi and Makoto Endou as Inoue’s coworkers. It does not specify their roles in the patent or describe particular collaborative contributions.

Conclusion

Shiomi Inoue’s recorded invention focuses on the structure and manufacture of a semiconductor device, including the design of its contact trench and surrounding features.