Yokohama, Japan

Shinzi Saito

This inventor holds 1 USPTO granted patent. Top assignee: Vlsi Technology Research Association. Active years: 1982.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinzi Saito. Retrieved from https://idiyas.com/inventor/shinzi-saito

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1982

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Shinzi Saito

Introduction

Shinzi Saito is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of integrated circuit technology. His work has led to the development of a unique method for manufacturing integrated circuit devices.

Latest Patents

Shinzi Saito holds a patent for a method of manufacturing an integrated circuit device. This patent outlines a process that involves preparing a silicon substrate with an isolated first region of a first conductivity type. The method includes selectively forming a polycrystalline silicon layer on the first region, implanting it with an ion of a second conductivity type, and heating the substrate to create regions of different conductivity types.

Career Highlights

Saito is associated with the VLSI Technology Research Association, where he has been able to apply his innovative ideas in a collaborative environment. His work has been instrumental in advancing the technology used in integrated circuits.

Collaborations

Shinzi Saito has worked alongside Satoshi Shinozaki, contributing to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Shinzi Saito's contributions to the field of integrated circuits demonstrate his innovative spirit and dedication to advancing technology. His patent reflects a significant step forward in manufacturing processes, showcasing the importance of his work in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…