This inventor holds 1 USPTO granted patent. Top assignee: Ookuma Diamond Device Inc.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Shinya Ohmagari and Diamond Transistor Innovation.
Introduction
Shinya Ohmagari is an inventor associated with Tosu, Japan, and Ookuma Diamond Device Inc. His work includes a patent for a field-effect transistor designed to maintain performance after X-ray exposure.
Latest Patents
Ohmagari is credited with 1 patent. The patent, titled “Field Effect Transistor,” describes a device built around a non-doped diamond layer with a hydrogen-terminated surface. Two p+ diamond layers flank a hydrogen-terminated region and support the source and drain electrodes. An insulating layer covers the region, with a gate electrode formed above it. The patent specifies a mutual conductance of at least 0.5 mS/mm at room temperature after an X-ray dose of 5 MGy.
Career Highlights
The patented design highlights the use of diamond semiconductor materials in transistor engineering, with particular attention to operation following substantial X-ray exposure. Ohmagari’s listed company affiliation is Ookuma Diamond Device Inc.
Collaborations
Junichi Kaneko and Hitoshi Koizumi are identified as Ohmagari’s coworkers.
Conclusion
Shinya Ohmagari’s patent documents a diamond-based field-effect transistor designed for radiation-exposed conditions, reflecting his contribution to semiconductor device innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile