The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Dec. 28, 2021
Ookuma Diamond Device Inc., Sapporo, JP;
Junichi Kaneko, Sapporo, JP;
Hitoshi Koizumi, Sapporo, JP;
Takahiro Yamaguchi, Sapporo, JP;
Naohisa Hoshikawa, Sapporo, JP;
Hitoshi Umezawa, Ikeda, JP;
Hideaki Yamada, Ikeda, JP;
Shinya Ohmagari, Tosu, JP;
OOKUMA DIAMOND DEVICE Inc., Sapporo, JP;
Abstract
A field effect transistor comprising: a non-doped diamond layer which has a hydrogen-terminated surface; first and second p+diamond layers which are formed on the non-doped diamond layer and sandwich a hydrogen-terminated region; a source electrode which is formed on the first p+diamond layer and is made of metal; a drain electrode which is formed on the second p+diamond layer and is made of metal; an insulating layer which is formed on the hydrogen-terminated region of the non-doped diamond layer; and a gate electrode which is formed on the insulating layer, a mutual conductance being equal to or higher than 0.5 mS/mm at room temperatures, after an X-ray is applied for an amount of 5 Mgy.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile