This inventor holds 1 USPTO granted patent. Top assignee: Ookuma Diamond Device Inc.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Hitoshi Umezawa and Diamond Semiconductor Innovation.
Introduction
Hitoshi Umezawa is an inventor associated with Ikeda, Japan, and Ookuma Diamond Device Inc. His work includes a patent for a diamond-based field-effect transistor designed to maintain performance after X-ray exposure.
Latest Patents
The provided information identifies one patent associated with Umezawa: “Field effect transistor.” The invention uses a hydrogen-terminated, non-doped diamond layer, p+ diamond layers, source and drain electrodes, an insulating layer, and a gate electrode. Its stated design achieves a mutual conductance of at least 0.5 mS/mm at room temperature after exposure to 5 MGy of X-rays. The record lists 1 patent.
Career Highlights
Umezawa’s listed patent focuses on diamond semiconductor technology and radiation tolerance. The described transistor structure combines diamond layers and a gate arrangement intended to preserve electrical performance under substantial X-ray exposure.
Collaborations
The provided information names Junichi Kaneko and Hitoshi Koizumi as Umezawa’s coworkers. It does not specify their roles in the patent or the extent of their collaboration.
Conclusion
Hitoshi Umezawa’s listed invention highlights a diamond-based transistor design with a stated focus on maintaining mutual conductance after X-ray exposure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile