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For the Inventor, By the Inventor

Tokyo, Japan

Shinsaku Saitoh

This inventor holds 3 USPTO granted patents. Top assignee: Nec Corporation. Active years: 2003-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinsaku Saitoh. Retrieved from https://idiyas.com/inventor/shinsaku-saitoh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3

% Patents Active = 66.7

Average Co-Inventor Count = 8.0

ph-index = 3

Forward Citations = 37(Granted Patents)


Company Filing History:

goldMedal3 out of 36,684 
 
Nec Corporation
 patents

Years Active: 2003-2004

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3 patents (USPTO):Explore Patents
1. 6798626 - Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material (2004-09-28),
2. 6718621 - Magnetoresistive head production method (2004-04-13),
3. 6624987 - Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material (2003-09-23),

Title: Innovations of Shinsaku Saitoh

Introduction

Shinsaku Saitoh is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of magnetoresistive technology. With a total of 3 patents to his name, Saitoh's work has advanced the understanding and application of magnetoresistive effect elements.

Latest Patents

One of his latest patents is a magnetoresistive effect element that features a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material. This invention provides a magnetoresistive effect element that is easy to manufacture while preventing a sense current from bypassing the barrier layer. Additionally, it includes a method for manufacturing the element and a magnetic recording apparatus that utilizes this technology. Another notable patent is the magnetoresistive head production method. This method enhances the production process of an MR head using a tunnel junction film, which consists of a free layer, a barrier layer, and a pinned layer. By managing the resistance between the free layer and the pinned layer, this method significantly increases the production yield of recording and reproduction heads that utilize ferromagnetic tunnel junction elements.

Career Highlights

Shinsaku Saitoh is currently associated with NEC Corporation, a leading technology company. His work at NEC has allowed him to focus on innovative solutions in the field of magnetoresistive technology. His contributions have been instrumental in advancing the capabilities of magnetic recording devices.

Collaborations

Saitoh has collaborated with notable colleagues, including Kazuhiko Hayashi and Keishi Ohashi. These collaborations have fostered a productive environment for innovation and development in their respective fields.

Conclusion

Shinsaku Saitoh's contributions to magnetoresistive technology exemplify the impact of innovative thinking in the field of electronics. His patents and collaborative efforts continue to influence advancements in magnetic recording technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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