Shanghai, China

Shino Jian

This inventor holds 1 USPTO granted patent. Top assignee: Sandisk Technologies Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shino Jian. Retrieved from https://idiyas.com/inventor/shino-jian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shino Jian and a Packaged Memory Device with Overhang Support

Introduction

Shino Jian is an inventor associated with Sandisk Technologies Inc. in Shanghai, China. Her listed patent focuses on supporting an overhanging silicon die in a packaged memory device. The supplied information credits her with 1 patent.

Latest Patents

Jian’s listed patent, “Packaged Memory Device with Overhang Support Structure,” describes a memory device built around a substrate, a controller die, and a stack of memory dies. The second silicon die extends beyond the first, creating an overhang. A printed support structure attached to the substrate supports this overhanging portion, while bond wires connect the dies’ contact pads to the substrate and electrically link the memory dies to the controller.

Career Highlights

The available information identifies Jian’s work with Sandisk Technologies Inc. and highlights her contribution to memory-device packaging. The patent’s support structure addresses the mechanical challenge of stabilizing a die that extends beyond the die beneath it.

Collaborations

Shujun Zheng and Jason Xiao are listed as Jian’s coworkers. The supplied details do not specify their roles in the patent or whether they collaborated with her on this invention.

Conclusion

Shino Jian’s listed patent presents a packaging approach that supports an overhanging memory die while maintaining electrical connections to the controller, reflecting her contribution to memory-device design.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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