Packaged memory device with overhang support structure

Abstract

A memory device includes a substrate, a controller die attached to the substrate, and a memory die stack. The memory die stack includes a first silicon die having a first contact pad surface and a bottom surface attached to the substrate. The memory die stack includes a second silicon die stacked on the first silicon die, the second silicon die including a second contact pad surface. An overhang portion of the second silicon die extends beyond the first silicon die. The memory die stack includes a printed support structure attached to the substrate, the printed support structure supporting the overhang portion of the second silicon die, and one or more bond wires that electrically connect the first and second contact pad surfaces to the substrate, thereby electrically connecting the first and second silicon dies to the controller die by way of the substrate.