Ota-ku, Japan

Shinnosuke Sekiya


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Shinnosuke Sekiya: Innovator in Semiconductor Wafer Processing

Introduction

Shinnosuke Sekiya is a notable inventor based in Ota-ku, Japan. He has made significant contributions to the field of semiconductor technology, particularly in wafer processing methods. His innovative approach has led to advancements that enhance the quality and efficiency of semiconductor devices.

Latest Patents

Shinnosuke Sekiya holds a patent for a semiconductor wafer processing method. This method involves forming a semiconductor wafer with a desired thickness by grinding the rear surface of the wafer, which has multiple devices on its front surface. The grinding process ensures that the wafer achieves a thickness between 10 µm and 100 µm. Importantly, a strain layer with a thickness of 0.05 µm to 0.1 µm is intentionally left on the rear surface. This strain layer serves a crucial role in providing a gettering effect, which helps prevent harmful influences on the quality of the semiconductor devices. Additionally, the grinding technique employed by Sekiya prevents degradation in transverse rupture strength.

Career Highlights

Shinnosuke Sekiya is associated with Disco Corporation, a company known for its expertise in semiconductor manufacturing equipment. His work at Disco Corporation has allowed him to focus on innovative solutions that address the challenges faced in semiconductor processing.

Collaborations

Shinnosuke Sekiya has collaborated with notable colleagues, including Setsuo Yamamoto and Naoya Sukegawa. These collaborations have contributed to the development of advanced technologies in the semiconductor industry.

Conclusion

Shinnosuke Sekiya's contributions to semiconductor wafer processing exemplify the importance of innovation in technology. His patented methods not only enhance the quality of semiconductor devices but also demonstrate the potential for further advancements in the field.

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