The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Sep. 20, 2007
Shinnosuke Sekiya, Ota-ku, JP;
Setsuo Yamamoto, Ota-ku, JP;
Naoya Sukegawa, Ota-ku, JP;
Naruto Fuwa, Ota-ku, JP;
Shinnosuke Sekiya, Ota-ku, JP;
Setsuo Yamamoto, Ota-ku, JP;
Naoya Sukegawa, Ota-ku, JP;
Naruto Fuwa, Ota-ku, JP;
Disco Corporation, Tokyo, JP;
Abstract
In a semiconductor wafer processing method of forming a semiconductor wafer having a desired thickness by grinding a rear surface of the semiconductor wafer having a plurality of devices formed on a front surface thereof, the rear surface of the semiconductor wafer is ground so that the semiconductor wafer has a thickness of 10 μm to 100 μm, and a strain layer having a thickness of 0.05 μm to 0.1 μm is left on the rear surface of the semiconductor wafer by the grinding. The strain layer is left to provide the gettering effect, preventing a harmful influence exerted on the quality of the semiconductor devices. Degradation in transverse rupture strength can be prevented by the grinding.