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For the Inventor, By the Inventor

Kawasaki, Japan

Shinjiro Umehara

USPTO Granted Patents = 7

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 50(Granted Patents)


Company Filing History:

goldMedal7 out of 39,230 
 
Fujitsu Corporation
 patents

Years Active: 2008-2012

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7 patents (USPTO):Explore Patents
1. 8194362 - Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic head (2012-06-05),
2. 8184407 - Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body (2012-05-22),
3. 8081404 - Magnetoresistive element including an amorphous reference layer, a crystal layer, and a pinned layer (2011-12-20),
4. 8072714 - Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device (2011-12-06),
5. 7535755 - Magnetic memory device and method for fabricating the same (2009-05-19),
6. 7466526 - Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device (2008-12-16),
7. 7382643 - Magnetoresistive effect element and magnetic memory device (2008-06-03),

Title: Innovations of Shinjiro Umehara

Introduction

Shinjiro Umehara is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of magnetoresistive devices, holding a total of seven patents. His work focuses on the development of advanced magnetic materials and structures that have applications in information storage and magnetic sensing technologies.

Latest Patents

Umehara's latest patents include a magnetoresistive effect device that features a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer, all multilayered on a substrate. This innovative device is designed to enhance the performance of magnetic heads used in information storage apparatuses. Another notable patent describes a magnetoresistance effect device with a specific structural configuration, including an underlying layer made of NiFeN and a pinning layer of antiferromagnetic material containing Ir and Mn. These inventions demonstrate Umehara's expertise in creating efficient and effective magnetic devices.

Career Highlights

Shinjiro Umehara is currently employed at Fujitsu Corporation, where he continues to push the boundaries of technology in the field of magnetoresistive devices. His work has not only contributed to the advancement of magnetic materials but has also positioned Fujitsu as a leader in innovative technology solutions.

Collaborations

Umehara has collaborated with notable colleagues such as Masashige Sato and Takahiro Ibusuki. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Shinjiro Umehara's contributions to the field of magnetoresistive devices highlight his innovative spirit and dedication to advancing technology. His patents and collaborations reflect a commitment to excellence in research and development.

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