Fujitsu Corporation

Shinjiro Umehara

Masashige Sato

Takahiro Ibusuki

Kazuo Kobayashi

Hiroshi Ashida

Takao Ochiai

A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.

Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic head

An underlying layer () made of NiFeN is disposed over the principal surface of a substrate. A pinning layer () made of antiferromagnetic material containing Ir and Mn is disposed on the underlying layer. A reference layer () made of ferromagnetic material whose magnetization direction is fixed through exchange-coupling with the pinning layer directly or via another ferromagnetic material layer, is disposed over the pinning layer. A nonmagnetic layer () made of nonmagnetic material is disposed over the reference layer. A free layer () made of ferromagnetic material whose magnetization direction changes in dependence upon an external magnetic field, is disposed over the nonmagnetic layer.

Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body

A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic field; an insulating layer overlaid on the free layer, the insulating layer made of an insulating material; an amorphous reference layer overlaid on the insulating layer, the amorphous reference layer made of a ferromagnetic material, the amorphous reference layer configured to fix the magnetization in a predetermined direction; a crystal layer overlaid on the amorphous reference layer, the crystal layer containing crystal grains; a non-magnetic layer overlaid on the crystal layer, the non-magnetic layer containing crystal grains having grown from the crystal grains in the crystal layer; and a pinned layer overlaid on the non-magnetic layer, the pinned layer configured to fix the magnetization in a predetermined direction.

Magnetoresistive element including an amorphous reference layer, a crystal layer, and a pinned layer

A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

The magnetic memory device includes a magnetic shield film, and a magnetoresistive effect elementformed over the magnetic shield filmand including a magnetic layer, a non-magnetic layerand a magnetic layer, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield filmformed over the side wall of the magnetoresistive effect element. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect elementcan be effectively prevented.

Magnetic memory device and method for fabricating the same

A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.

Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device

The magnetoresistive effect element comprises a pinned magnetic layerhaving a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layerformed on the pinned magnetic layer, a free magnetic layerformed on the nonmagnetic spacer layerand formed of a single ferromagnetic layer, a nonmagnetic spacer layerformed on the free magnetic layer, and a pinned magnetic layerof a multilayered SAF structure formed on the nonmagnetic spacer layer, wherein a magnetization direction of the ferromagnetic layerof the pinned magnetic layer, which is nearest the free magnetic layer, and a magnetization direction of the ferromagnetic layerof the pinned magnetic layer, which is nearest the free magnetic layer, are opposite to each other.

Growing community of inventors

Kawasaki, Japan

Shinjiro Umehara