Atsugi, Japan

Shinji Ohno

USPTO Granted Patents = 21 

Average Co-Inventor Count = 3.9

ph-index = 8

Forward Citations = 193(Granted Patents)


Location History:

  • Sapporo, JP (2015)
  • Atsugi, JP (2014 - 2020)
  • Kanagawa, JP (2014 - 2020)

Company Filing History:


Years Active: 2014-2020

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21 patents (USPTO):Explore Patents

Title: Innovations of Shinji Ohno in Semiconductor Technology

Introduction

Shinji Ohno, based in Atsugi, Japan, is a prolific inventor with 21 patents to his name. His contributions to semiconductor technology, particularly in the development of high-performance transistors, have significantly advanced the field.

Latest Patents

Among his latest patents is a groundbreaking semiconductor device and method for manufacturing it. This invention focuses on a transistor that exhibits excellent electrical characteristics. It comprises an oxide semiconductor layer featuring a source region, a drain region, and a channel formation region positioned atop an insulating surface. The innovation includes a gate insulating film that overlays the oxide semiconductor layer, with a gate electrode that overlaps the channel formation region. Notably, the source and drain regions are engineered to have a higher oxygen concentration than the channel formation region, enhancing their functionality.

Additionally, Ohno's manufacturing method for the semiconductor device emphasizes creating a high-performance transistor that boasts remarkable on-state characteristics. The method involves utilizing an oxide semiconductor film with a channel formation region flanked by low-resistance regions incorporating a metal element and a dopant. Heat treatment facilitates the addition of the metal element, while implantation allows the introduction of the dopant, forming these crucial low-resistance regions. This ensures that the transistor can provide high-speed response and operation.

Career Highlights

Shinji Ohno has made significant strides in the semiconductor industry during his career. He has worked at Semiconductor Energy Laboratory Co., Ltd., where his innovative work has continued to shape the future of semiconductor devices. His inventions have laid the groundwork for advancements in electronics, showcasing his expertise in semiconductor technology.

Collaborations

Throughout his career, Ohno has collaborated with esteemed colleagues such as Yuichi Sato and Junichi Koezuka. These partnerships have allowed for the exchange of ideas and expertise, further enhancing the development of cutting-edge semiconductor technology.

Conclusion

Shinji Ohno’s journey as an inventor is marked by his commitment to innovation and excellence in the field of semiconductors. His 21 patents reflect a deep understanding of advanced materials and manufacturing processes that continue to influence the technological landscape. Through his work, Ohno remains a pivotal figure in the advancement of electronic devices and semiconductor equipment.

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