The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Feb. 23, 2012
Shinji Ohno, Atsugi, JP;
Yuichi Sato, Isehara, JP;
Junichi Koezuka, Tochigi, JP;
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;
Abstract
A method for manufacturing a highly reliable semiconductor device with less change in threshold voltage is provided. An insulating film from which oxygen can be released by heating is formed in contact with an oxide semiconductor layer, and light irradiation treatment is performed on a gate electrode or a metal layer formed in a region which overlaps with the gate electrode, so that oxygen is added into the oxide semiconductor layer in a region which overlaps with the gate electrode. Accordingly, oxygen vacancies or interface states in the oxide semiconductor layer in a region which overlaps with the gate electrode can be reduced.