The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
May. 29, 2012
Junichi Koezuka, Tochigi, JP;
Shinji Ohno, Atsugi, JP;
Yuichi Sato, Isehara, JP;
Shunpei Yamazaki, Setagaya, JP;
Junichi Koezuka, Tochigi, JP;
Shinji Ohno, Atsugi, JP;
Yuichi Sato, Isehara, JP;
Shunpei Yamazaki, Setagaya, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.