Kyoto, Japan

Shingo Ota

This inventor holds 2 USPTO granted patents. Top assignees: Rohm Co., Ltd., Rohm Gmbh. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shingo Ota. Retrieved from https://idiyas.com/inventor/shingo-ota-slxs95ms

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Shingo Ota - Innovator in Semiconductor Manufacturing

Introduction

Shingo Ota is a notable inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative approach has led to the development of a unique method for producing semiconductor devices.

Latest Patents

Shingo Ota holds 1 patent for his invention titled "Method for manufacturing semiconductor device and semiconductor device." This patent outlines a comprehensive method that includes preparing a semiconductor substrate with distinct device forming regions and an intended cutting line. The process involves forming electrodes on both surfaces of the substrate and cutting it along the designated line, showcasing Ota's expertise in semiconductor technology.

Career Highlights

Ota is currently employed at Rohm Co., Ltd., a leading company in the semiconductor industry. His work at Rohm has allowed him to focus on advancing semiconductor manufacturing techniques. His contributions have been instrumental in enhancing the efficiency and effectiveness of semiconductor devices.

Collaborations

Shingo Ota collaborates with Jun Terada, a fellow innovator in the field. Their partnership exemplifies the collaborative spirit that drives innovation in technology.

Conclusion

Shingo Ota's work in semiconductor manufacturing highlights his role as a key inventor in the industry. His patented method demonstrates his commitment to advancing technology and improving manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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