Taipei-Hsien, Taiwan

Shing-Hwa Renn


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Innovations in Memory Technology: The Contributions of Shing-Hwa Renn

Introduction

Shing-Hwa Renn, an inventor based in Taipei-Hsien, Taiwan, has made significant strides in the field of memory technology. With a focus on innovative methods for enhancing flash memory capabilities, Renn holds one patent that has contributed to advancements in this essential area of electronics.

Latest Patents

Renn's notable patent is titled "Method of Fabricating a Split-Gate Flash Memory." This innovative technique involves creating a split-gate flash memory through a detailed series of fabrication steps. The process begins with the formation of a tunnelling oxide layer, followed by layering a first conductive layer, and a hard mask layer on a substrate. Subsequent steps include the precise definition of drain and floating gate openings, alongside the formation of polyoxide layers which play crucial roles in exposing the substrate for the creation of a drain region.

The method culminates in the removal of the hard mask layer and etching the first conductive layer into a floating gate, while new layers, including a control gate and a source region, are carefully built on the resulting structure. This patent is a testament to Renn's innovative approach to improving memory technology.

Career Highlights

Shing-Hwa Renn is currently employed at Winbond Electronics Corporation, where he contributes to the development of cutting-edge memory solutions. His role at the company underscores his commitment to driving innovation within the technological landscape. With one patent to his name, his work continues to influence advancements in electronic memory devices.

Collaborations

Throughout his career, Renn has collaborated with prominent colleagues such as Chih-Mu Huang and Jung-Yu Tsai. Their teamwork highlights the collaborative spirit prevalent in research and development environments, where shared ideas and expertise lead to groundbreaking innovations.

Conclusion

Shing-Hwa Renn's contributions to the field of flash memory through his innovative patent underscore the importance of continued research and development in technology. As the demand for efficient memory solutions grows, Renn's work at Winbond Electronics Corporation and collaborations with other talented individuals will undoubtedly play a key role in shaping the future of memory technology. His achievements serve as an inspiration for aspiring inventors in the industry.

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