Winbond Electronics Corporation

Shing-Hwa Renn

Chih-Mu Huang

Shu-Huei Lin

Jung-Yu Tsai

A split-gate flash memory is formed by a method described in the following steps. A tunnelling oxide layer, a first conductive layer, and a hard mask layer are formed on a substrate in sequence. A drain opening and a floating gate opening are formed on the hard mask layer by defining the hard mask layer in order to expose the first conductive layer. A first polyoxide layer and a second polyoxide layer are formed on the first conductive layer exposed by the drain opening and the floating gate opening, respectively. The first polyoxide layer and the first conductive layer beneath the first polyoxide layer are removed to expose the substrate in the drain opening. A drain region is formed in the substrate in the drain opening. The hard mask layer is removed, and the first conductive layer is etched into a floating gate using the second polyoxide layer as a mask. A split-gate oxide layer and a second conductive layer are formed on the resulting structure in sequence. A control gate is formed by defining the second conductive layer, and a source region beside the floating gate is formed in the substrate.

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Taipei-Hsien, Taiwan

Shing-Hwa Renn