This inventor holds 1 USPTO granted patent. Top assignee: Vanguard International Semiconductor Corporation. Active years: 1999.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1999
Title: Shing-Huang Wu: Innovator in Semiconductor Technology
Introduction
Shing-Huang Wu is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of capacitors used in DRAM memory.
Latest Patents
Wu holds a patent for a "Method of manufacturing a crown shape capacitor." This innovative method involves several steps, including forming a first polysilicon layer, patterning a photoresist, etching the polysilicon layer, and using oxygen plasma to strip the photoresist. The process culminates in the creation of a crown shape structure, which is essential for enhancing the performance of DRAM semiconductor memory. He has 1 patent to his name.
Career Highlights
Shing-Huang Wu is currently employed at Vanguard International Semiconductor Corporation, where he continues to push the boundaries of semiconductor manufacturing. His work has been instrumental in developing advanced technologies that improve memory performance and efficiency.
Collaborations
Wu has collaborated with talented individuals such as Yu-Chun Ho and Meng-Chao Cheng, contributing to a dynamic work environment that fosters innovation and creativity.
Conclusion
Shing-Huang Wu's contributions to semiconductor technology, particularly through his patented methods, highlight his role as a key innovator in the industry. His work continues to influence advancements in memory technology, showcasing the importance of innovation in this field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile