The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
May. 03, 1996
Yu-Chun Ho, Taipeihsien, TW;
Meng-Chao Cheng, Hsin-Chu Hsien, TW;
Pei-Wen Li, Kaohsiung, TW;
Hsu-Li Cheng, Tainanhsien, TW;
Yu-Hua Huang, Taipeihsien, TW;
Shing-Huang Wu, Taichunghsien, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
The present invention is a method of manufacturing crown shape capacitors for use in DRAM semiconductor memory. The method includes the steps of forming a first polysilicon layer, patterning a photoresist on the first polysilicon layer, etching the first polysilicon layer, using oxygen plasma to strip the photoresist, forming a side wall polymer onto the side walls of the first polysilicon layer, using the side wall polymer as a mask to etch back the first polysilicon layer to form a crown shape structure, removing the side wall polymer, depositing a dielectric layer onto the first polysilicon layer, and depositing a second polysilicon layer onto the dielectric layer.