Kyoto, Japan

Shin Egami

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Rohm Co., Ltd.. Active years: 2011.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Shin Egami: Innovator in Nitride Semiconductor Technology

Introduction

Shin Egami is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor laminated structures. His innovative work has led to advancements that are crucial for various electronic applications.

Latest Patents

Shin Egami holds a patent for a "Method for forming a nitride semiconductor laminated structure and method for manufacturing a nitride semiconductor element." This patent outlines a process that includes forming a first layer composed of a group III nitride semiconductor using an Hcarrier gas, followed by the creation of a p-type second layer containing Mg, and finally, the formation of a third layer on top. This method is essential for the manufacturing of nitride semiconductor devices.

Career Highlights

Shin Egami is associated with Rohm Co., Ltd., a leading company in the semiconductor industry. His work at Rohm has been instrumental in pushing the boundaries of semiconductor technology. With a total of 1 patent, he has established himself as a key figure in this innovative field.

Collaborations

Throughout his career, Shin has collaborated with notable colleagues, including Hiroaki Ohta and Hirotaka Otake. These collaborations have further enhanced his research and development efforts in semiconductor technology.

Conclusion

Shin Egami's contributions to nitride semiconductor technology exemplify the spirit of innovation in the field. His patented methods are paving the way for future advancements in electronic devices.

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