The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Mar. 07, 2008
Hirotaka Otake, Kyoto, JP;
Hiroaki Ohta, Kyoto, JP;
Shin Egami, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A method for forming a nitride semiconductor laminated structure includes forming a first layer that is an n-type or i-type first layer composed of a group III nitride semiconductor using an Hcarrier gas; forming a second layer by laminating a p-type second layer composed of a group III nitride semiconductor and containing Mg on the first layer using an Hcarrier gas; and forming a third layer that is an n-type or i-type third layer composed of a group III nitride semiconductor on the second layer using an Hcarrier gas after forming the second layer. A method for manufacturing a nitride semiconductor device includes the method steps for forming the nitride semiconductor laminated structure.